Table 2.
Equations and parameters for the single-compartment sEIF model
| Variable | Equation |
|---|---|
| Membrane potential V |
|
| Leak current |
|
| Spike-generating (depolarizing) current |
|
| Potential reset after spiking |
when 
|
| Intracellularly injected current |
(default) |
| Parameter | Value |
| Membrane capacitance density Cm | 1.0 μF/cm2 |
| Leak conductance density GL | 0.1 mS/cm2 |
| Leak reversal potential EL | -65.3 mV |
| Threshold for spike-generating current VT | -60.2 mV |
| Slope factor of the spike-generating current KT | 3.5 mV |
| Spike-detecting threshold Vspike | +15 mV |
| Reset potential Vreset | -65.3 mV (same as EL) |
| Refractory period τref | 2.8 ms |