Name | Value | Description |
---|---|---|
a | 3 nS | Subthreshold adaptation |
b | 200 pA | Spike-triggered adaptation |
–0.0896 | Magnitude of D1 effect on resting potential EL | |
C | 80 pF | Membrane capacitance |
ΔT | 1.8 ms | Slope factor of spike upstroke |
EL | –55.8 mV | Leak reversal potential |
gL | 3 nS | Leak conductance |
Ie | 15 pA | Iinj to obtain in vitro firing rate without synaptic input |
τw | 20 ms | Adaptation time constant |
20 mV | Spike cut off | |
Vr | –65mV | Spike reset |
VT | –55.2 mV | Threshold potential |