4-AP induces changes of epileptic L2/3 PN intrinsic properties
| Intrinsic property | No 4-AP (n = 17, 8) | +4-AP (100 μM) (n = 17, 8) | Statistical comparisons (p value) |
|---|---|---|---|
| Input resistance (MΩ) | 146.00 ± 67.25 | 111.40 ± 53.23 |
Paired t test p = 0.0002 |
| Voltage sag (%) | 6.43 ± 3.58 | 6.68 ± 3.48 |
Wilcoxon test p = 0.3060 |
| Membrane decay (ms) | 28.15 ± 7.90 | 33.38 ± 17.54 |
Wilcoxon test p = 0.3303 |
| AP threshold (mV) | −38.14 ± 4.28 | −40.59 ± 4.93 |
Paired t test p = 0.0433 |
| AP amplitude (mV) | 86.80 ± 7.62 | 87.40 ± 4.62 |
Paired t test p = 0.7729 |
| AP half-width (ms) | 1.28 ± 0.32 | 1.61 ± 0.39 |
Paired test p = 0.0091 |
| AHP magnitude (mV) | −16.85 ± 2.76 | −14.13 ± 3.26 |
Wilcoxon test p = 0.0021 |
| AHP latency (ms) | 8.59 ± 3.79 | 15.53 ± 5.19 |
Paired t test p = 0.0002 |
| ΔAHP (mV) | −5.45 ± 3.22 | −5.87 ± 4.50 |
Paired t test p = 0.6689 |
| AP broadening ratio | 1.26 ± 0.10 | 1.34 ± 0.25 |
Wilcoxon test p = 0.2078 |
| AP amplitude adaptation ratio | 0.91 ± 0.05 | 0.92 ± 0.07 |
Paired t test p = 0.2812 |
| Maximum firing rate (Hz) | 26.08 ± 8.70 | 25.29 ± 7.17 |
Paired t test p = 0.3543 |
| Accommodation ratio (400 pA step) | 0.29 ± 0.10 | 0.44 ± 0.29 |
Wilcoxon test p = 0.0273 |
| Accommodation ratio (500 pA step) | 0.27 ± 0.08 | 0.35 ± 0.16 |
Wilcoxon test p = 0.0342 |
| Accommodation ratio (600 pA step) | 0.23 ± 0.09 | 0.34 ± 0.13 |
Paired t test p = 0.0143 |
| Accommodation ratio (750 pA step) | 0.23 ± 0.07 | 0.35 ± 0.19 |
Wilcoxon test p = 0.0105 |
| Accommodation ratio (800 pA step) | 0.22 ± 0.07 | 0.30 ± 0.14 |
Wilcoxon test p = 0.0034 |
| Accommodation ratio (850 pA step) | 0.22 ± 0.09 | 0.45 ± 0.50 |
Wilcoxon test p = 0.0068 |
Intrinsic properties of L2/3 epileptic PNs before and after 4-AP (100 µM) wash on.